Formation area of thin amorphous Zr-Mn and Zr-Ta films prepared by cocondensation
Formation area of thin amorphous Zr-Mn and Zr-Ta films prepared by cocondensation
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DOI：
10.1007/s002570050092
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发表时间：
1996-03
期刊：
影响因子：
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通讯作者：
H. Hecht;G. Weigang;S. Eickert;U. Geyer
中科院分区：
文献类型：
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作者：
H. Hecht;G. Weigang;S. Eickert;U. Geyer
在293~923K温度范围内，在蓝宝石衬底上共凝聚了两种合金薄膜，并用X射线衍射仪研究了它们的结构，确定了非晶膜在成分/衬底温度面上的形成区域。当衬底温度为300K时，非晶形成区的浓度范围为：10at%~80at%-Zr，20at%~70at%。在共凝聚实验中，非晶态的形成延伸到了衬底温度，分别为873K和823K。这一结果与以前对其他合金系(Tm=Co，Cu，V)的研究结果进行了比较。从原子半径差、混合热和结合能三个参数讨论了这些非晶膜的形成区域。
Thin Zr-Mn and Zr-Ta alloy-films were cocondensed onto sapphire substrates at temperatures between 293 K and 923 K. Their structure was investigated by X-ray diffraction and the formation area of amorphous films in the composition/substrate temperature plane was determined. At a substrate temperature of 300 K the glass-forming regions cover a concentration range from 10at%-Zr to 80at%-Zr for Zr-Mn and from 20at%-Zr to 70at%-Zr for Zr-Ta. The formation of amorphous states in cocondensation experiments extends up to substrate temperatures of 873 K for the Zr-Mn and 823 K for the Zr-Ta system. The results are compared to previous investigations of other Zr-TM alloy-systems (TM = Co, Cu, V). The formation areas of these amorphous films are discussed with respect to three parameters: the difference of the atomic radii, the enthalpy of mixing, and the binding energy.