Site-Specific Fabrication of Blue Quantum Emitters in Hexagonal Boron Nitride
Site-Specific Fabrication of Blue Quantum Emitters in Hexagonal Boron Nitride
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DOI：
10.1021/acsphotonics.2c00631
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发表时间：
2022-06-15
期刊：
影响因子：
7
通讯作者：
Toth, Milos
中科院分区：
文献类型：
--
作者：
Gale, Angus;Li, Chi;Toth, Milos
面元氮化硼（hBN）作为从紫外到近红外光谱范围的量子发射体的固态主体获得了相当大的关注。然而，大多数发射器的原子结构是推测性的或未知的，并且发射器制造方法通常遭受差的再现性、空间精度或光谱特异性。在这里，我们提出了一个强大的，电子束技术的蓝色量子发射器与零声子线在436 nm（2.8 eV）的网站特定的制造。我们表明，发射强度与电子剂量成正比，并且制造方法的功效与305 nm（4.1 eV）处的缺陷发射相关。我们属性的蓝色发光体产生的碳簇的电子碰撞的碎片，并表明，发射器制造技术的鲁棒性和通用性增强了预辐照退火处理。我们的研究结果提供了重要的见解，在hBN和特定位置的制造hBN量子发射体的框架的缺陷的物理性质和结构。
Hexagonal boron nitride (hBN) is gaining considerable attention as a solid-state host of quantum emitters from the ultraviolet to the near-infrared spectral ranges. However, the atomic structures of most of the emitters are speculative or unknown, and emitter fabrication methods typically suffer from poor reproducibility, spatial accuracy, or spectral specificity. Here, we present a robust, electron beam technique for site-specific fabrication of blue quantum emitters with a zero-phonon line at 436 nm (2.8 eV). We show that the emission intensity is proportional to electron dose and that the efficacy of the fabrication method correlates with a defect emission at 305 nm (4.1 eV). We attribute blue emitter generation to the fragmentation of carbon clusters by electron impact and show that the robustness and universality of the emitter fabrication technique are enhanced by a pre-irradiation annealing treatment. Our results provide important insights into photophysical properties and structure of defects in hBN and a framework for site-specific fabrication of quantum emitters in hBN.