Fast optical determination of microvoid size in hydrogenated amorpshous silicon layers based on data obtained from positron annihilation spectroscopy

Fast optical determination of microvoid size in hydrogenated amorpshous silicon layers based on data obtained from positron annihilation spectroscopy
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基于正电子湮没光谱获得的数据快速光学测定氢化非晶硅层中的微孔尺寸

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发表时间:
2017
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通讯作者:
A. Uedono
A. Uedono
中科院分区:
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作者:
N. Matsuki;N. Oshima;B. O’Rourke;A. Uedono

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