Hole versus electron transport in fullerenes
Hole versus electron transport in fullerenes
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DOI:
10.1016/j.orgel.2023.106798
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发表时间:
2023-03
影响因子:
3.2
通讯作者:
Eunkyung Cho;V. Coropceanu;J. Brédas
中科院分区:
文献类型:
--
作者:
Eunkyung Cho;V. Coropceanu;J. Brédas
We have carried out density functional theory (DFT) calculations to derive the microscopic parameters that describe the hole and electron transport properties in C60and C70and their derivatives. The computed relaxation energies and the results of normal-mode analyses point out that there are no significant differences between the electron-vibration couplings and hole-vibration couplings in the C60systems, where the differences between the reorganization energies for hole and electron transfers do not exceed 10 meV, except in the case of the parent C60system where this difference is about 40 meV. The DFT estimates of the electronic couplings for holes and electrons in C60and its derivatives are also found to be very similar. Thus, our theoretical results confirm the conclusions of recent experimental investigations that underline that the C60fullerenes should not be regarded as just n-type transporting materials but in fact are intrinsically ambipolar. The DFT calculations performed for C70show that the reorganization energy for hole transport is slightly lower (5 meV) than for electron transport and this difference is even larger, up to 100 meV, in the functionalized C70systems. These results suggest that hole mobilities in C70and its derivatives could also be comparable or even larger than the corresponding electron mobilities. In addition, the DFT calculations indicate that, with respect to unsubstituted fullerenes, the derivatization has a much larger impact on the ionization potential energies than on the electron affinity energies, which are both reduces; therefore, chemical modifications could be further exploited to decrease the intrinsically high IP values of C60and C70and lead to a better match with the workfunctions of common electrodes, which would facilitate hole injection.