Multisubband Monte Carlo Study of Transport, Quantization, and Electron-Gas Degeneration in Ultrathin SOI n-MOSFETs
Multisubband Monte Carlo Study of Transport, Quantization, and Electron-Gas Degeneration in Ultrathin SOI n-MOSFETs
复制标题
超薄 SOI n-MOSFET 中的输运、量子化和电子气简并的多子带蒙特卡罗研究
DOI：
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发表时间：
2007
影响因子：
3.1
通讯作者：
L. Selmi
中科院分区：
文献类型：
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作者：
L. Lucci;P. Palestri;D. Esseni;Lorenzo Bergagnini;L. Selmi
本文提出了一种新的自洽多子带蒙特卡罗模型，用于十计量mosfet反转层的电子输运。仿真器在实际空间和k空间中都是二维的，并考虑了k空间中的电子-气体简并。对纳米级超薄体绝缘体上硅mosfet的模拟表明，子带结构和载流子简并对输运特性，特别是注入速度和通道后向散射有很大影响
This paper presents a new self-consistent multisubband Monte Carlo model for electronic transport in the inversion layer of decananometric MOSFETs. The simulator is 2D in real space and in k-space and accounts for the electron-gas degeneracy in the k-space. Simulation of nanoscale ultra-thin-body silicon-on-insulator MOSFETs shows that the subband structure and the carrier degeneracy strongly affect the transport properties and, in particular, the injection velocity and the channel back-scattering