Evidence of an oxygen recombination center in p + -n GaInNAs solar cells
Evidence of an oxygen recombination center in p + -n GaInNAs solar cells
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p-n GaInNAs 太阳能电池中氧复合中心的证据
DOI：
10.1063/1.126383
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发表时间：
2000
影响因子：
4
通讯作者：
D. Friedman
中科院分区：
文献类型：
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作者：
A. Balcioglu;R. Ahrenkiel;D. Friedman
我们用深能级瞬态谱（DLTS）研究了p ~+-n型GaInNAs太阳电池中的深能级杂质。这些薄膜生长的大气和低压金属有机气相外延。基极层掺杂有硅，发射极层掺杂有锌。两种类型的样品进行了研究：样品生长与不添加氧杂质。在所有样品中发现两个电子陷阱。它们被指定为：E1，在EC−0.23-EC−0.27 eV，E2在EC−0.45 eV，E2* 在0.77 eV。随着氧杂质的加入，DLTS显示出额外的陷阱，在EC−0.59 eV处指定为E3（电子），在EV+0.59 eV处指定为H3（空穴）。使用二次离子质谱，在两组样品中发现氧浓度约为2-3×1019和1×1017 cm−3。然而，只有含氧的样品含有两个近中能隙能级（E3和H3）。我们提出的证据表明，这些水平与氧缺陷。当我们改变直流偏置电压时，E3陷阱消失。
We have studied deep-level impurities in p+–n GaInNAs solar cells using deep-level transient spectroscopy (DLTS). These films were grown by atmospheric- and low-pressure metalorganic vapor-phase epitaxy. The base layer is doped with silicon, and the emitter layer is zinc doped. Two types of samples have been studied: samples were grown with and without the addition of oxygen impurity. Two electron traps were found in all samples. These are designated as: E1, at EC−0.23–EC−0.27 eV, E2 at EC−0.45 eV, and E2* at 0.77 eV. With the addition of oxygen impurity, DLTS showed additional traps designated as E3 (electron) at EC−0.59 eV and H3 (hole) at EV+0.59 eV. Using secondary ion mass spectroscopy, the oxygen concentration was found to be about 2–3×1019 and 1×1017 cm−3 in two sets of samples. However, only samples containing oxygen contained the two near-midgap levels (E3 and H3). We present evidence that these levels are associated with the oxygen defect. As we change the dc bias voltage, the E3 trap disappears...
DOI：
10.1143/jjap.35.1273
发表时间：
1996-02-01
期刊：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
影响因子：
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作者：
Kondow, M;Uomi, K;Yazawa, Y
通讯作者：
Yazawa, Y