Temperature dependence of the electrical resistivity and thermopower of U2Ni2In and Nd2Ni2Sn
Temperature dependence of the electrical resistivity and thermopower of U2Ni2In and Nd2Ni2Sn
复制标题
U2Ni2In 和 Nd2Ni2Sn 的电阻率和热电势与温度的关系
DOI:
10.1063/1.361998
复制
发表时间:
1996
影响因子:
3.2
通讯作者:
J. Etourneau
中科院分区:
文献类型:
--
作者:
R. P. Pinto;M. Amado;M. Braga;J. B. Sousa;B. Chevalier;D. Laffargue;J. Etourneau
Accurate measurements of the electrical resistivity (ρ,dρ/dT) and of the thermoelectric power (S,dS/dT) were performed in the ternary compounds U2Ni2In and Nd2Ni2Sn from 4 K to 250 K, and the results are compared with those previously obtained in U2Ni2Sn. The pair U2Ni2In/U2Ni2Sn enables us to study the influence of the p‐electron character (and other band effects related to the elements In/Sn) on the transport properties, whereas the pair Nd2Ni2Sn/U2Ni2Sn provides direct information on the role played by the 4f/5f electrons. All these compounds order initially in the antiferromagnetic state, exhibiting a characteristic minimum in dρ/dT at TN. In the U2Ni2In compound a drastic reduction is observed in ρ(T) slightly below TN, suggesting the coexistence of the antiferromagnetic state with a coherent Kondo effect when T≤0.8 TN. In Nd2Ni2Sn we observe two distinct phase transitions below TN, of first‐order character and likely associated with order‐order magnetic transitions. The anomalous behavior of ρ(T) in...