Structural and electrical properties of nitrogen-incorporated MOCVD Hf-silicate gate dielectrics treated by plasma nitridation in an Ar/N2 ambient
Structural and electrical properties of nitrogen-incorporated MOCVD Hf-silicate gate dielectrics treated by plasma nitridation in an Ar/N2 ambient
复制标题
Ar/N2 环境中等离子体氮化处理的掺氮 MOCVD Hf-硅酸盐栅极电介质的结构和电学特性
DOI：
10.1149/1.2006627
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发表时间：
2005
影响因子：
3.9
通讯作者：
T. Arikado
中科院分区：
文献类型：
--
作者：
S. Kamiyama;T. Miura;Y. Nara;T. Arikado
在Ar/N2气氛中对金属有机化学气相沉积(MOCVD)Hf-硅酸盐栅介质层进行了等离子体氮化处理。通过改变等离子体氮化过程中的压力，可以控制MOCVD Hf-Silate栅介质中的氮化浓度，氮气主要分布在高k膜的表面附近。由于氮化处理抑制了界面氧化物的生长，有效氧化层厚度减小，使用氮化硅酸氢化物(HfSiON)栅电介质可获得1.5 nm的有效氧化层厚度。HfSiON栅电介质的栅漏电流比参考的SiO_2膜降低了4个数量级以上。在0.8 mV/cm处，HfSiON栅电介质的有效迁移率曲线与参考的1.6 nm SiON薄膜的有效迁移率曲线基本相同。
Metallorganic chemical vapor deposition (MOCVD) hafnium (Hf)-silicate gate dielectrics were treated by plasma nitridation in an Ar/N 2 ambient. The nitridation concentration in MOCVD Hf-silicate gate dielectrics can be controlled by altering the pressure during plasma nitridation; nitrogen is mainly distributed near the surface of the high-k films. The effective oxide thickness decreased with nitrided treatment due to suppression of the growth of the interfacial oxide, and a value of 1.5 nm was obtained using nitrided Hf-silicate (HfSiON) gate dielectrics. The gate leakage currents for HfSiON gate dielectrics were reduced by more than four orders of magnitude compared to reference SiO 2 films. The effective mobility curves for HfSiON gate dielectrics were almost the same as the reference 1.6 nm SiON films at 0.8 MV/cm.