Towards a Deeper Comprehension of the Interaction Mechanisms between Mesoporous Silicon and NO2
Towards a Deeper Comprehension of the Interaction Mechanisms between Mesoporous Silicon and NO2
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DOI：
10.1002/1521-396x(200011)182:1
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发表时间：
2000-11
期刊：
影响因子：
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通讯作者：
L. Boarino;M. Rocchia;C. Baratto;A. Rossi;E. Garrone;S. Borini;F. Geobaldo;E. Comini;G. Faglia;G. Sberveglieri;G. Amato
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文献类型：
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作者：
L. Boarino;M. Rocchia;C. Baratto;A. Rossi;E. Garrone;S. Borini;F. Geobaldo;E. Comini;G. Faglia;G. Sberveglieri;G. Amato
室温多孔硅 NO2 传感器的高灵敏度需要对 NO2 和介孔硅之间的表面动力学进行研究。通过气体气氛中的电测量和原位 FTIR，发现了一种新的相互作用机制的证据，该机制强烈影响多孔硅（PS）传感器的电导率。吸收带归因于 NO2，这表明由于其高电子亲和力，载流子从硅线转移到 NO2。迄今为止提出的模型解释了介孔硅的高电阻率，有力地支持了这种解释。
The high sensitivity of a room-temperature porous silicon NO2 sensor has required an investigation of surface dynamics between NO2 and mesoporous silicon. By means of electrical measurements in gas atmosphere and in-situ FTIR, evidence of a new interaction mechanism strongly affecting the electrical conductivity of the porous silicon (PS) sensors has been found. Absorption bands have been attributed to NO2—, suggesting carrier transfer from the silicon wires to NO2, thanks to its high electronic affinity. The models proposed until now, explaining the high resistivity of mesoporous silicon, strongly support this interpretation.