Wide-wavelength-range control of photoluminescence polarization in closely stacked InAs/GaAs quantum dots
Wide-wavelength-range control of photoluminescence polarization in closely stacked InAs/GaAs quantum dots
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DOI：
10.1063/1.5096411
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发表时间：
2019-06-21
影响因子：
3.2
通讯作者：
Kita, Takashi
中科院分区：
文献类型：
--
作者：
Kaizu, Toshiyuki;Tajiri, Yusuke;Kita, Takashi
我们开发了一种生长紧密堆叠的InAs/GaAs量子点（QDs）的方法来控制宽波长范围内的光致发光（PL）偏振特性。在堆积生长过程中，紧密堆叠的量子点的发射波长随衬底温度的降低而红移，而PL偏振特性受GaAs间隔层厚度和量子点层数的控制。揭示了在所有生长温度下，既能增强横向磁极化分量又能获得高PL强度的最佳砷化镓间隔层厚度的统一规则。在430 ~ 480℃的衬底温度下生长的具有最佳间隔层厚度的30层堆叠量子点在1.15 ~ 1.3m波段表现出tm增强的偏振特性。此外，我们还利用时间分辨PL研究了在优化的GaAs间隔层厚度下紧密堆叠的量子点中的一维电子态。
We developed a method of growing closely stacked InAs/GaAs quantum dots (QDs) to control the photoluminescence (PL) polarization characteristics in a wide wavelength range. The emission wavelength of the closely stacked QDs redshifted with decreasing substrate temperature during stacking growth, while the PL polarization characteristic was controlled by the GaAs spacer layer thickness and the number of QD layers. A unified rule for the optimum GaAs spacer layer thickness that both enhances the transverse magnetic (TM)-polarized component and achieves a high PL intensity for all growth temperatures was revealed. 30-layer stacked QDs with the optimum spacer layer thickness grown at substrate temperatures from 430 to 480 degrees C exhibited TM-enhanced polarization characteristics in the 1.15-1.3m band. Moreover, we studied the one-dimensional electronic states in the closely stacked QDs with the optimized GaAs spacer layer thickness by time-resolved PL.