Strong Hot Carrier Effects in Single Nanowire Heterostructures
Strong Hot Carrier Effects in Single Nanowire Heterostructures
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单纳米线异质结构中的强热载流子效应
DOI：
10.1021/acs.nanolett.9b01345
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发表时间：
2019
期刊：
影响因子：
10.8
通讯作者：
Jagadish Chennupati
中科院分区：
文献类型：
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作者：
Shojaei Iraj Abbasian;Linser Samuel;Jnawali Giriraj;Wickramasuriya N;Jackson Howard E;Smith Leigh M;Kargar Fariborz;Bal;in Alex;er A;Yuan Xiaoming;Caroff Philip;Tan Hark Hoe;Jagadish Chennupati
利用瞬态瑞利散射研究了GaAs_（0.7）Sb_（0.3）/InP纳米线异质结中热载流子的热化过程。通过比较能量损失率在单核心只有GaAs 0.7Sb 0.3纳米线，不显示实质性的热载流子效应与核-壳纳米线，我们表明，InP壳层的存在下，在低温下的纵向光学声子发射率，然后导致强烈的热载流子效应基本上抑制。
We use transient Rayleigh scattering to study the thermalization of hot photoexcited carriers in single GaAs0.7Sb0.3/InP nanowire heterostructures. By comparing the energy loss rate in single core-only GaAs0.7Sb0.3nanowires which do not show substantial hot carrier effects with the core–shell nanowires, we show that the presence of an InP shell substantially suppresses the longitudinal optical phonon emission rate at low temperatures which then leads to strong hot carrier effects.