500/spl deg/C operation of a GaN/SiC heterojunction bipolar transistor
500/spl deg/C operation of a GaN/SiC heterojunction bipolar transistor
复制标题
GaN/SiC 异质结双极晶体管的 500/spl deg/C 运行
DOI：
10.1109/drc.1995.496291
复制
发表时间：
1995
期刊：
影响因子：
--
通讯作者：
B. van Zeghbroeck
中科院分区：
文献类型：
--
作者：
S. Chang;J. Pankove;M. Leksono;B. van Zeghbroeck
碳化硅已被提议作为用于高功率、高温半导体器件的优选材料，主要是因为其大的能带隙和高的热导率。具有GaN宽带隙发射极和SiC基极和集电极区域的异质结双极晶体管最近已经被证明具有非常高的DC电流增益（> 100，000），并且已经在高达260/spl deg/C下操作。我们提出的第一个操作的半导体双极晶体管在500/spl度/C的温度下，电流增益大于100。在25/spl deg/C ~ 535/spl deg/C的温度范围内，获得了GaN/SiC n-p-n HBT的共基极I-V特性、电流增益与发射极电流的关系曲线和Gummel曲线。在此温度范围内，除了漏电流随温度升高而增加外，I-V特性几乎没有变化。由于器件的高增益和基极与集电极之间的漏电流，仅获得了共基极特性。高温操作和即使在高温下的大增益表明这些器件在高温和高功率操作方面具有非凡的潜力。
Silicon Carbide has been proposed as a preferred material for high-power, high temperature semiconductor devices, primarily because of its large energy-bandgap and high thermal conductivity. Heterojunction bipolar transistors with a GaN wide bandgap emitter and SiC base and collector region have recently been demonstrated to have very high DC current gain (>100,000) and have been operated up to 260/spl deg/C. We present the first operation of a semiconductor bipolar transistor at a temperature of 500/spl deg/C with a current gain greater than 100. The GaN/SiC n-p-n HBT's common base I-V characteristics, current gain versus emitter current curves, and Gummel plots were obtained at temperatures ranging from 25/spl deg/C to 535/spl deg/C. The I-V characteristics showed little change over this temperature range, except for an increase in leakage current with increasing temperature. Only common base characteristics were obtained due to the high gain of the devices and the leakage current between base and collector. The high temperature of operation and the large gain even at elevated temperatures indicate the extraordinary potential of these devices for high-temperature and high-power operation.