Non-aqueous electrodeposition of p-block metals and metalloids from halometallate salts

Non-aqueous electrodeposition of p-block metals and metalloids from halometallate salts
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DOI:
10.1039/c3ra40739j
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发表时间:
2013-01-01
期刊:
影响因子:
3.9
通讯作者:
Reid, Gillian
Reid, Gillian
中科院分区:
化学3区
文献类型:
--
作者:
Bartlett, Philip N.;Cook, David;Reid, Gillian

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描述了一种用于结晶、无氧化物p嵌段金属和类金属非水电沉积的通用电化学系统,并通过组合这些试剂的混合物证明了该系统适用于二元半导体合金的电沉积。四丁基卤金属酸铵[(NBu4)-Bu-n][InCl4]、[(NBu4)-Bu-n][SbCl4]、[(NBu4)-Bu-n][BiCl4]、[(NBu4)-Bu-n](2)[SeCl6]和[(NBu4)-Bu-n](2)[TeCl6]在[(NBu4)-Bu-n]Cl支撑电解质存在下,极易溶解于CH2Cl2中,形成稳定性良好的可重复性电化学体系。所制备的电解质具有较宽的电位窗口,并证明了铟、锑、铋、碲和硒在玻碳和氮化钛电极上的电沉积。采用扫描电子显微镜、能量色散x射线分析和粉末x射线衍射对沉积元素进行了表征。试剂的相容性允许制备含有几种卤金属酸盐的单一电解质,从而允许电沉积二元材料,如InSb所示。因此,这种室温下“自下而上”的电化学方法应该适用于各种化合物半导体材料的单锅沉积。
A versatile electrochemical system for the non-aqueous electrodeposition of crystalline, oxide free p-block metals and metalloids is described, and it is demonstrated that by combining mixtures of these reagents, this system is suitable for electrodeposition of binary semiconductor alloys. The tetrabutylammonium halometallates, [(NBu4)-Bu-n][InCl4], [(NBu4)-Bu-n][SbCl4], [(NBu4)-Bu-n][BiCl4], [(NBu4)-Bu-n](2)[SeCl6] and [(NBu4)-Bu-n](2)[TeCl6], are readily dissolved in CH2Cl2 and form reproducible electrochemical systems with good stability in the presence of a [(NBu4)-Bu-n]Cl supporting electrolyte. The prepared electrolytes show a wide potential window and the electrodeposition of indium, antimony, bismuth, tellurium and selenium on glassy carbon and titanium nitride electrodes has been demonstrated. The deposited elements were characterised by scanning electron microscopy, energy dispersive X-ray analysis and powder X-ray diffraction. The compatibility of the reagents permits the preparation of a single electrolyte containing several halometallate species which allows the electrodeposition of binary materials, as is demonstrated for InSb. This room temperature, 'bottom-up' electrochemical approach should thus be suitable for the one-pot deposition of a wide range of compound semiconductor materials.