Modulation of the electronic state of carbon thin films by inorganic substrates
Modulation of the electronic state of carbon thin films by inorganic substrates
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DOI：
10.1016/j.carbon.2022.04.079
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发表时间：
2022-08
期刊：
影响因子：
10.9
通讯作者：
T. Ishii;Daichi Okuhara;Rieko Kobayashi;J. Ozaki
中科院分区：
文献类型：
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作者：
T. Ishii;Daichi Okuhara;Rieko Kobayashi;J. Ozaki
碳基材料的电子态控制对于碳材料作为电子器件和催化剂的广泛应用具有重要意义。本文报道了一种通过在无机支撑材料和碳薄膜之间建立共价键来控制碳基材料电子态的新方法。采用化学气相沉积法在无机衬底（Al2O3、AlN和ZrO2）上生长了厚度为1 nm的碳薄膜。基底与碳膜之间形成共价键。通过对场效应晶体管特性和功函数的研究，揭示了不同衬底类型碳薄膜的狄拉克点和费米能级之间的不同关系。在al2o3或zro2上生长的薄膜的费米能级均低于狄拉克点能级，其中zro2样品的费米能级最低。相比之下，生长在AlN上的薄膜的费米能级位于比狄拉克点更高的能量上。碳膜的费米能级取决于无机衬底，而费米能级的变化可以用衬底与薄膜之间共价键的性质来解释。
The control of the electronic states of carbon-based materials is of great importance for the widespread use of carbon materials as electronic devices and catalysts. This article reports a novel method of controlling the electronic states of carbon-based materials by establishing covalent bonds between inorganic support materials and carbon thin films. Carbon thin films of 1 nm thickness were grown on inorganic substrates (Al2O3, AlN, and ZrO2) using chemical vapor deposition. Covalent bond formation was confirmed between the substrates and the carbon films. The investigations of field effect transistor characteristics and work function revealed the different relationships between the Dirac points and Fermi levels of carbon films depending on the type of substrate. The Fermi level of the films grown on Al2O3or ZrO2was found to be lower than the Dirac point energy level, with the ZrO2sample exhibiting the lowest Fermi level. In contrast, the Fermi level of the film grown on AlN was located at a higher energy than the Dirac point. The Fermi level of the carbon film depends on the inorganic substrate, and the change in the Fermi level can be explained by the nature of the covalent bonds between the substrate and the film.