Positive temperature coefficient of resistivity effect in Pb-doped KnbO_3
Positive temperature coefficient of resistivity effect in Pb-doped KnbO_3
复制标题
Pb掺杂KnbO_3电阻率效应的正温度系数
DOI：
10.1557/jmr.2002.0432
复制
发表时间：
2002
影响因子：
2.7
通讯作者：
M. Drofenik
中科院分区：
文献类型：
--
作者：
I. Pribošič;D. Makovec;M. Drofenik
KNbO_3是一种铁电材料，居里温度（T _C）为415°C，因此具有成为高温正温度系数电阻率（PTCR）应用材料的潜力。在这项研究中，我们研究了在施主掺杂KnbO_3陶瓷含有0，0.1，0.2，和0.3摩尔%的PbO的PTCR效应。施主掺杂的KNbO_3陶瓷表现出PTCR异常，室温电阻率相对较低。随着PbO的加入，KnbO_3的四方相-立方相转变温度（T _C）降低，而正交相-四方相转变温度（T _OT）不变。
KnbO_3 is a ferroelectric material with a Curie temperature ( T _C) at 415°C, thus giving it the potential to be a material for high-temperature positive temperature coefficient of resistivity (PTCR) applications. In this study, we investigated the PTCR effect in donor-doped KnbO_3 ceramics containing 0, 0.1, 0.2, and 0.3 mol% PbO. The donor-doped KnbO_3 ceramics exhibited a PTCR anomaly with a relatively low room-temperature resistivity. The temperature of the tetragonal-to-cubic phase transition ( T _C) of the KnbO_3 decreased with the amount of added PbO, while the orthorhombic-to-tetragonal phase transition ( T _OT) remained unchanged.