Surface vs. bulk electronic structure of silver determined by photoemission
Surface vs. bulk electronic structure of silver determined by photoemission
复制标题
通过光电发射确定银的表面电子结构与体相电子结构
DOI：
10.1209/0295-5075/88/67004
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发表时间：
2009
期刊：
影响因子：
--
通讯作者：
T. Chiang
中科院分区：
文献类型：
--
作者：
N. Speer;M. Brinkley;Yang Liu;Ching;T. Miller;T. Chiang
光电子能谱探测的是表面还是体相性质一直是人们感兴趣和争论的话题。本文利用角分辨光电子能谱对在Si（111）衬底上制备的不同厚度的Ag膜的电子结构进行了研究。正如预期的那样，当薄膜厚度接近体积极限时，在小厚度处观察到的离散量子阱态或子带合并成连续体。然而，许多离散的状态仍然孤立的间隙或口袋中的散装连续。虽然这些银表面状态已经预测以前的计算，大多数是实验确定在这里只有第一次。
Whether photoemission probes surface or bulk properties has long been a topic of interest and debate. This work employs angle-resolved photoemission to map the electronic structure of Ag films of varying thicknesses prepared on Si(111). As expected, the discrete quantum-well states or subbands observed at small thicknesses merge into a continuum as the film thickness approaches the bulk limit. However, a number of discrete states remain isolated within gaps or pockets in the bulk continuum. While these Ag surface states have been predicted previously by calculations, most are experimentally identified herein only for the first time.