Growth of AlBN solid solutions by organometallic vapor-phase epitaxy
Growth of AlBN solid solutions by organometallic vapor-phase epitaxy
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有机金属气相外延生长 AlBN 固溶体
DOI：
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发表时间：
1997
期刊：
影响因子：
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通讯作者：
R. Wilson
中科院分区：
文献类型：
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作者：
A. Polyakov;M. Shin;W. Qian;M. Skowronski;D. Greve;R. Wilson
以三乙基硼、三甲基铝和氨水为前驱体，采用有机金属气相外延技术，在1050 °C的温度下，在蓝宝石衬底上生长了多层AlBN。结果表明，硼很容易进入渗层，其在固相中的浓度高达40%。然而，单相Al1−xBxN薄膜只能在成分不超过x=0.01时生长。当固相中硼含量较高时，形成第二富B相。经透射电子显微镜和X射线衍射仪分析，该物相为纤锌矿BN。这种热力学上不利的相的生长成为可能，很可能是因为它发生在纤锌矿AlN岛提供的框架内，这些岛首先在表面形成，并为纤锌矿BN的横向生长提供了场所。这导致了AlN和BN晶体的柱状结构的形成，AlN和BN晶体在基面上取向并并存。
Layers of AlBN were grown on sapphire by organometallic vapor-phase epitaxy at 1050 °C using triethylboron, trimethylaluminum, and ammonia as precursors. It is shown that boron is readily incorporated into the layers and its concentration in the solid phase can be as high as 40%. However, single phase Al1−xBxN films can only be grown for compositions not exceeding x=0.01. For higher boron concentrations in the solid the second B-rich phase is formed. This phase was identified as wurtzite BN based on the results of transmission electron microscopy and x-ray diffraction. The growth of this thermodynamically unfavorable phase becomes possible, most probably, because it occurs within the framework provided by wurtzite AlN islands first formed on the surface and setting up the sites for lateral growth of wurtzite BN. That leads to formation of columnar structure of AlN and BN crystallites oriented in the basal plane and existing side by side.