Pattern-effect-free semiconductor optical amplifier achieved using quantum dots
Pattern-effect-free semiconductor optical amplifier achieved using quantum dots
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DOI：
10.1049/el:20020716
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发表时间：
2002-09
影响因子：
1.1
通讯作者：
T. Akiyama;N. Hatori;Y. Nakata;H. Ebe;M. Sugawara
中科院分区：
文献类型：
--
作者：
T. Akiyama;N. Hatori;Y. Nakata;H. Ebe;M. Sugawara
It is experimentally shown that the pattern effect inherent in semiconductor optical amplifiers can be eliminated by using self-assembled quantum dots in the active region. This property comes from the ultrafast response of the dominant gain nonlinearity, or spectral-hole burning, which can respond as fast as < 3 ps due to intra-dot carrier relaxation, thereby enabling operation up to 160 Gbit/s.
