Picosecond laser ranging at wavelengths up to 2.4 µm using an InAs avalanche photodiode
Picosecond laser ranging at wavelengths up to 2.4 µm using an InAs avalanche photodiode
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使用 InAs 雪崩光电二极管的皮秒激光波长可达 2.4 µm
DOI：
10.1049/el.2015.3995
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发表时间：
2016
影响因子：
1.1
通讯作者：
Butera S
中科院分区：
文献类型：
--
作者：
Butera S
用InAs雪崩光电二极管在1.32.37μm波长范围内用脉冲激光进行了飞行时间测量。InAs在波长高达3.5μm时是光敏的，并且主要是电子倍增降低了探测器噪声，InAs APD在中波红外中具有灵敏的光学测量皮秒瞬变的明显潜力。描述了在室温下使用InAs APDS进行飞行时间测距的实验室演示。
Time‐of‐flight measurements using pulsed laser illumination in the wavelength region between 1.3 to 2.37 μm have been demonstrated with an InAs avalanche photodiode (APD). InAs is photo‐sensitive at wavelengths up to 3.5 μm and with predominantly electron multiplication reducing detector noise, InAs APDs have clear potential for sensitive optical measurements of picosecond transients in the mid‐wave infrared. Laboratory‐based demonstrations of time‐of‐flight ranging using InAs APDs operated at room temperature is described.