Strain Distribution Analysis of Sputter-Formed Strained Si by Tip-Enhanced Raman Spectroscopy
Strain Distribution Analysis of Sputter-Formed Strained Si by Tip-Enhanced Raman Spectroscopy
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DOI：
10.1143/apex.4.025701
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发表时间：
2011-01
影响因子：
2.3
通讯作者：
H. Hanafusa;N. Hirose;A. Kasamatsu;T. Mimura;T. Matsui;H. Chong;H. Mizuta;Y. Suda
中科院分区：
文献类型：
--
作者：
H. Hanafusa;N. Hirose;A. Kasamatsu;T. Mimura;T. Matsui;H. Chong;H. Mizuta;Y. Suda
利用原子力显微镜（AFM）和尖端增强拉曼光谱（TERS）系统，同时对应变消除四层Si 1-xGex缓冲层上应变Si（s-Si）层的应变和表面起伏分布进行纳米级测量，澄清通过我们先前提出的溅射外延方法形成的s-Si样品具有比通过气体外延形成的s-Si样品更光滑和更均匀的应变表面。源分子束外延。TERS分析表明，底层的Si 1-xGex缓冲层的成分波动在很大程度上与溅射样品的弱s-Si应变波动有关。
Simultaneous nanometer-scale measurements of the strain and surface undulation distributions of strained Si (s-Si) layers on strain-relief quadruple-Si1-xGex-layer buffers, using a combined atomic force microscopy (AFM) and tip-enhanced Raman spectroscopy (TERS) system, clarify that an s-Si sample formed by our previously proposed sputter epitaxy method has a smoother and more uniformly strained surface than an s-Si sample formed by gas-source molecular beam epitaxy. The TERS analyses suggest that the compositional fluctuation of the underlying Si1-xGex buffer layer is largely related to the weak s-Si strain fluctuation of the sputtered sample.