Two-carrier analyses of the transport properties of black phosphorus under pressure
Two-carrier analyses of the transport properties of black phosphorus under pressure
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DOI：
10.1103/physrevb.95.115126
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发表时间：
2017-03-13
影响因子：
3.7
通讯作者：
Tokunaga, Masashi
中科院分区：
文献类型：
--
作者：
Akiba, Kazuto;Miyake, Atsushi;Tokunaga, Masashi
我们报告的黑磷的电子输运性质，并分析它们使用一个双载流子模型在宽范围的压力高达2.5 GPa。在0.29 GPa的半导体状态下，通过假设两种不同密度和迁移率的空穴共存，合理地再现了霍尔电阻中显著的非线性行为。另一方面，1.01 GPa以上的磁输运性质的双载流子分析表明，具有几乎相同密度的高迁移率电子和空穴载流子共存，即，几乎补偿了黑磷的半金属性质。在半金属状态下，双载流子模型和量子振荡的分析表明，随着压力的增加，载流子密度有系统地增加。在低磁场下观察到的霍尔电阻率的符号反转表明，在半金属黑磷中存在高迁移率电子（10（5）cm（2）V（-1）s（-1）），大约是空穴的十倍。我们的结论是，极大的正磁电阻，已观察到在半金属状态下，不能再现由传统的双载流子模型。
We report on the electronic transport properties of black phosphorus and analyze them using a two-carrier model in a wide range of pressure up to 2.5 GPa. In a semiconducting state at 0.29 GPa, the remarkable nonlinear behavior in the Hall resistance is reasonably reproduced by assuming the coexistence of two kinds of holes with different densities and mobilities. On the other hand, two-carrier analyses of the magnetotransport properties above 1.01 GPa suggest the coexistence of high-mobility electron and hole carriers that have almost the same densities, i.e., nearly compensated semimetallic nature of black phosphorus. In the semimetallic state, analyses of both the two-carrier model and quantum oscillations indicate a systematic increase in the carrier densities as pressure increases. An observed sign inversion of Hall resistivity at low magnetic fields suggests the existence of high-mobility electrons (10(5)cm(2)V(-1)s(-1)), which is roughly ten times larger than that of holes, in the semimetallic black phosphorus. We conclude that the extremely large positive magnetoresistance that has been observed in the semimetallic state cannot be reproduced by a conventional two-carrier model.