Elimination of SiC/SiO2 interface states by preoxidation ultraviolet‐ozone cleaning
Elimination of SiC/SiO2 interface states by preoxidation ultraviolet‐ozone cleaning
复制标题
通过预氧化紫外臭氧清洗消除SiC/SiO2界面态
DOI：
10.1063/1.115611
复制
发表时间：
1996
影响因子：
4
通讯作者：
C. Harris
中科院分区：
文献类型：
--
作者：
V. Afanas’ev;A. Stesmans;M. Bassler;G. Pensl;M. Schulz;C. Harris
碳化硅表面(3C、4H、6H多型体)经紫外线照射和氧气预氧化清洗后，碳化硅/SiO_2界面的电学性质得到显著改善。结果表明，碳化硅热氧化处理后，碳化硅表面的缺陷物种被去除，而碳化硅表面存在缺陷物种。碳团簇被认为是造成碳化硅/二氧化硅界面状态的主要原因。碳化硅表面(3C、4H、6H多型体)的预氧化清洗通过暴露在紫外线和氧气中可以显著改善碳化硅/二氧化硅界面的电子性质。结果表明，碳化硅热氧化处理后，碳化硅表面的缺陷物种被去除，而碳化硅表面存在缺陷物种。碳团簇被认为是造成SiC/SiO_2界面态的主要原因。
The preoxidation cleaning of silicon carbide surfaces (3C, 4H, 6H polytypes) by exposing them to ultraviolet radiation and oxygen is shown to produce a significant improvement in the electronic properties of SiC/SiO2 interfaces. It is found that this treatment results in a removal of defect species, otherwise present at the SiC surface after thermal oxidation of SiC. Carbon clusters are proposed as the attacked species responsible for a substantial part of the SiC/SiO2 interface states.The preoxidation cleaning of silicon carbide surfaces (3C, 4H, 6H polytypes) by exposing them to ultraviolet radiation and oxygen is shown to produce a significant improvement in the electronic properties of SiC/SiO2 interfaces. It is found that this treatment results in a removal of defect species, otherwise present at the SiC surface after thermal oxidation of SiC. Carbon clusters are proposed as the attacked species responsible for a substantial part of the SiC/SiO2 interface states.