Kapitza resistance between silicon and helium-4
Kapitza resistance between silicon and helium-4
复制标题
硅和氦 4 之间的卡皮查电阻
DOI：
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发表时间：
1994
期刊：
影响因子：
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通讯作者：
R. Pohl
中科院分区：
文献类型：
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作者：
J. Olson;R. Pohl
通过同时测量声子在硅表面或硅表面附近的散射和声子从硅表面向液氦的传输，我们定量地关联了这两个过程。对于干净的抛光硅表面，在0.3 K以下的热声子散射变得非常小，这种情况下的透射概率接近于声学失配理论的预测，为0.27%。由于声子频率的增加或表面的无序性增加，扩散散射增加，透射概率增加，即热边界阻力减小。在完全漫射散射的极限下，声子的透射率超过30%，热边界电阻接近漫射失配模型预测的值在3倍以内。
By simultaneously measuring the phonon scattering at or near a silicon surface and the phonon transmission from it into liquid helium, we have correlated quantitatively these two processes. For a clean polished silicon surface, the scattering of thermal phonons below 0.3 K becomes very small, and the transmission probability in this case approaches the prediction of the acoustic mismatch theory, which is 0.27%. The transmission probability increases, i.e. the thermal boundary resistance decreases, as the diffuse scattering increases either as a result of increasing the phonon frequency or the disorder at the surface. In the limit of completely diffuse scattering, the phonon transmission probability exceeds 30%, and the thermal boundary resistance approaches the value predicted by the diffuse mismatch model to within a factor of three.