Deep plasma etching of piezoelectric PZT with SF6
Deep plasma etching of piezoelectric PZT with SF6
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DOI：
10.1116/1.1409392
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发表时间：
2001-11-01
影响因子：
1.4
通讯作者：
Palmer, RE
中科院分区：
文献类型：
--
作者：
Bale, M;Palmer, RE
用六氟化硫（SF6）气体的反应离子蚀刻已经被用于在压电材料锆钛酸铅Pb（Zr，Ti）O-3（PZT）的体样品中产生深结构。选择SF6是为了与硅的干法蚀刻兼容，具有生产混合硅压电器件的可能性。厚的光致抗蚀剂层已经被用于以120 nm min（-1）的速率将PZT图案化到2 μ m的深度。使用更耐用的镍掩模，通过电镀穿过厚抗蚀剂形成，导致结构高度大于100 μ m，平均侧壁角度接近72度。深PZT结构的轮廓被认为取决于蚀刻持续时间和结构的间距，分别归因于掩模和蚀刻产物的再沉积。在SF6等离子体中加入氮气和氩气，可以产生小的改善。通过将气体添加与衬底的加热相结合，已经获得了高达200 nm min（-1）的PZT蚀刻速率。(C)2001年美国真空学会。
Reactive ion etching with sulfur hexafluoride (SF6) gas has been employed to create deep structures in bulk samples of the piezoelectric material lead zirconate titanate, Pb(Zr,Ti)O-3 (PZT). SF6 is chosen for compatibility with dry etching, of silicon with a possibility for production of hybrid silicon-piezoelectric devices. Thick photoresist layers have been used to pattern PZT to a depth of 2 mum at a rate of 120 nm min(-1). The use of more durable nickel masks, formed by electroplating through the thick resist, leads to structures greater than 100 mum in height, with an average sidewall angle of similar to72degrees. The profile of the deep PZT structures is seen to depend on etch duration and the spacing; of structures, attributed to the redeposition of mask and etch products, respectively. The addition of nitrogen and argon to the SF6 plasma is shown to produce small improvements in the profiles. By combining gas addition with heating of the substrate PZT etch rates up to 200 nm min(-1) have been obtained. (C) 2001 American Vacuum Society.