Deep‐level transient spectroscopy: Increased accuracy of interpretation of silicon/silicon dioxide interface state data by the assistance of computer simulations
Deep‐level transient spectroscopy: Increased accuracy of interpretation of silicon/silicon dioxide interface state data by the assistance of computer simulations
复制标题
深能级瞬态光谱：借助计算机模拟提高硅/二氧化硅界面态数据解释的准确性
DOI：
10.1063/1.349817
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发表时间：
1991
影响因子：
3.2
通讯作者：
O. Engström
中科院分区：
文献类型：
--
作者：
A. Ricksand;O. Engström
金属氧化物半导体（MOS）电容器中Si/SiO2界面态的小填充脉冲深能级瞬态谱（DLTS）测量的计算机模拟表明，为了正确解释DLTS数据，必须考虑电荷载流子发射和捕获期间表面电势的时间依赖性。结果表明，界面态密度Nit不仅影响DLTS谱的振幅，而且影响DLTS谱的形状。Nit和捕获截面的准确值，获得了指数以及非指数发射的电荷载流子拟合模拟实验数据。这解决了由于高界面态密度的时间依赖性表面势的非指数瞬态的问题。辐照MOS样品的测量验证了数值模拟可以用于准确确定界面态参数。所观察到的测量和模拟DLTS信号的幅度之间的差异是…
Computer simulations of small filling pulse deep level transient spectroscopy (DLTS) measurements of Si/SiO2 interface states in metal‐oxide semiconductor (MOS) capacitors, demonstrate that the time dependence of the surface potential during emission and capture of charge carriers must be considered for a correct interpretation of DLTS data. It is demonstrated that not only the amplitude but also the shape of DLTS spectra are influenced by the interface state density Nit. Accurate values of Nit and capture cross sections are obtained for exponential as well as nonexponential emission of charge carriers by fitting simulated to experimental data. This solves the problem of nonexponential transients due to a time dependent surface potential for high interface state densities. Measurements on irradiated MOS samples verify that numerical simulations can be used for accurate determination of interface state parameters. An observed discrepancy between the amplitudes of the measured and simulated DLTS signals is ...