The Transient Response of Organic Electrochemical Transistors
The Transient Response of Organic Electrochemical Transistors
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DOI：
10.1002/adts.202100563
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发表时间：
2022-02-20
影响因子：
3.3
通讯作者：
Luessem, Bjoern
中科院分区：
文献类型：
--
作者：
Paudel, Pushpa R.;Skowrons, Michael;Luessem, Bjoern
有机电化学晶体管（OECTs）对电或化学变化的快速响应对于该技术的广泛接受至关重要。然而，寻找快速开关OECT的设计规则是复杂的，因为电流瞬态器件模型被高度简化，并且依赖于忽略晶体管沟道内离子和空穴浓度细节的器件的1D近似。为了提高对瞬态过程限制OECTs速度的理解，提出了一个二维漂移扩散模型，并进行了实验验证。结果表明，开关的强烈影响，被忽略在以前的模型中的横向离子电流。这些电流的一致的治疗导致的依赖性的时间常数上施加的漏极电位和复杂的依赖性的响应时间常数上的详细的设备的几何形状。除了更好地理解OECTs的瞬态响应，这里讨论的结果突出了在适当表征OECTs的开关时间常数的挑战，并加强了必要性，以确保开关测量两个稳态条件之间，而不是瞬态之间。
A fast response of organic electrochemical transistors (OECTs) to electrical or chemical changes is essential for a widespread acceptance of this technology. However, finding design rules for fast switching OECTs is complicated by the fact that current transient device models are highly simplified and rely on a 1D approximation of the device that neglects details of the ion and hole concentration inside the transistor channel. To improve the understanding of transient processes limiting the speed of OECTs, a 2D drift-diffusion model is presented and experimentally validated. It is shown that switching is strongly influenced by lateral ion currents that are neglected in previous models. A consistent treatment of these currents leads to a dependency of the time constants on the applied drain potential and a complex dependency of the response time constants on the detailed device geometry. In addition to an improved understanding of the transient response of OECTs, the results discussed here highlight the challenges in properly characterizing switching time constants of OECTs, and reinforce the necessity to ensure that switching is measured between two steady-state conditions, and not between transient states.