GaN-Based Cyan Light-Emitting Diode with up to 1-GHz Bandwidth for High-Speed Transmission Over SI-POF
GaN-Based Cyan Light-Emitting Diode with up to 1-GHz Bandwidth for High-Speed Transmission Over SI-POF
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GaN 基青色发光二极管，带宽高达 1 GHz，可通过 SI-POF 进行高速传输
DOI：
10.1109/jphot.2017.2693207
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发表时间：
2017
影响因子：
2.4
通讯作者：
Jin
中科院分区：
文献类型：
--
作者：
J. Vinogradov;R. Kruglov;R. Engelbrecht;O. Ziemann;J. Sheu;K. Chi;J. Wun;Jin
我们展示了一种新型的青色发光二极管（LED）的图案化蓝宝石衬底上的性能，用作塑料光纤（POF）通信的光源，中心波长为500 nm。通过显著减少有源InxGa 1-xN/GaN多量子威尔斯阱的数量和势垒层的厚度至5 nm，这种具有47 μm有源直径的器件在室温和110 °C操作下分别在所有已报道的高速可见光LED中展示了高达1和0.7 GHz的创纪录的3-dB电光带宽。采用带透镜的TO-Can封装来提高POF的耦合效率。在不归零和4脉冲幅度调制下，阶跃指数POF分别实现了5.5和5.8 Gbit/s的极高数据速率。当POF传输距离达到50 m时，由于POF的色散和衰减，两种调制方案的最大数据速率都降低到1.3 Gbit/s。
We demonstrate the performance of a novel cyan light-emitting diode (LED) on a patterned sapphire substrate for use as a light source for plastic optical fiber (POF) communications with the central wavelength at 500 nm. By significantly reducing the number of active InxGa1-xN/GaN multiple quantum wells and the thickness of the barrier layers down to 5 nm, such a device with an active diameter of 47 μm demonstrates a record high 3-dB electrical-to-optical bandwidth, as high as 1 and 0.7 GHz, among all the reported high-speed visible LEDs under room temperature and 110 °C operation, respectively. TO-Can packaging with a lens is used to enhance the POF coupling efficiency. Very-high data rates of 5.5 and 5.8 Gbit/s are achieved over step index POF under nonreturn-to-zero and 4-pulse amplitude modulation, respectively. When the POF transmission distance reaches 50 m, there is degradation in the maximum data rate for both modulation schemes to 1.3 Gbit/s due to the dispersion and attenuation of the POF.