Atomic Layer GaSe/MoS2 van der Waals Heterostructure Photodiodes with Low Noise and Large Dynamic Range
Atomic Layer GaSe/MoS2 van der Waals Heterostructure Photodiodes with Low Noise and Large Dynamic Range
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DOI：
10.1021/acsphotonics.8b00318
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发表时间：
2018-07-01
期刊：
影响因子：
7
通讯作者：
Feng, Philip X. -L.
中科院分区：
文献类型：
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作者：
Islam, Arnob;Lee, Jaesung;Feng, Philip X. -L.
我们报告原子层货车德瓦尔斯（VDW）异质结构光电二极管在可见光区工作的演示，使堆叠单层到几层的n型二硫化钼（MoS 2）的顶部几层的p型硒化镓（GaSe）晶体。当使用具有低接触电阻的对称少层石墨烯（FLG）接触时，原子层vdW光电二极管在532 nm的波长处表现出类似于3A/W的优异的光响应度。另一方面，对于具有非对称GaSe/FLG和MoS 2/金（Au）接触的GaSe/MoS 2光电二极管，由于暗电流减小，获得了类似于10（-14）W/root Hz的非常低的噪声等效功率的NEP，这证明了检测亚pW（
We report on the demonstration of atomic layer van der Waals (vdW) heterostructure photodiodes operating in the visible regime, enabled by stacking single-to few-layer n-type molybdenum disulfide (MoS2) on top of few-layer p-type gallium selenide (GaSe) crystals. The atomic layer vdW photodiode exhibits an excellent photoresponsivity of similar to 3A/W at the wavelength of 532 nm when symmetric few-layer graphene (FLG) contacts with low contact resistance are used. On the other hand, for a GaSe/MoS2 photodiode with asymmetric GaSe/FLG and MoS2/gold (Au) contacts, a very low noise equivalent power of NEP similar to 10(-14) W/root Hz is obtained due to dark current reduction, which demonstrates the feasibility of detecting sub-pW (