Low-temperature heteroepitaxial growth of InSb on CdTe by metalorganic chemical vapor deposition
Low-temperature heteroepitaxial growth of InSb on CdTe by metalorganic chemical vapor deposition
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金属有机化学气相沉积在 CdTe 上低温异质外延生长 InSb
DOI：
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发表时间：
1988
期刊：
影响因子：
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通讯作者：
Pao
中科院分区：
文献类型：
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作者：
Jing;P. Bush;W. K. Chen;Pao
报道了低温金属有机化学气相沉积InSb在(001)CdTe上的生长。这一低温工艺是通过预裂化技术进行的。使用简单的两级加热炉可以在衬底温度低至185 °C的情况下获得外延生长。用双晶X射线衍射仪、扫描电子显微镜和X射线能谱分析对沉积的薄膜进行了分析。在2 40 °C下生长的薄膜为化学计量比、单晶、镜面形貌。
We report the low‐temperature metalorganic chemical vapor deposition of InSb on (001)CdTe. This low‐temperature process was carried out by a precracking technique. Epitaxial growth with a substrate temperature as low as 185 °C can be obtained using a simple two‐stage heater. The deposited films were examined by double‐crystal x‐ray diffraction, scanning electron microscope, and energy dispersive analysis of x ray. The films grown at 240 °C are stoichiometric, single crystal, and of specular surface morphology.