Germanium channel MOSFETs: Opportunities and challenges

Germanium channel MOSFETs: Opportunities and challenges
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DOI：
10.1147/rd.504.0377
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发表时间：
2006-07
期刊：
IBM J. Res. Dev.
影响因子：
--
通讯作者：
H. Shang;M. Frank;E. Gusev;J. Chu;S. Bedell;K. Guarini;M. Ieong
H. Shang;M. Frank;E. Gusev;J. Chu;S. Bedell;K. Guarini;M. Ieong
中科院分区：
其他
文献类型：
--
作者：
H. Shang;M. Frank;E. Gusev;J. Chu;S. Bedell;K. Guarini;M. Ieong

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本文综述了锗(Ge)表面沟道MOSFET器件和应变Ge埋沟MOSFET结构集成方面的进展和当前的关键问题。根据我们的最新结果，讨论了应变Ge埋沟MOSFET的器件设计和可扩展性。提出了Ge沟道器件与CMOS兼容的集成方法。
This paper reviews progress and current critical issues with respect to the integration of germanium (Ge) surface-channel MOSFET devices as well as strained-Ge buried-channel MOSFET structures. The device design and scalability of strained-Ge buried-channel MOSFETs are discussed on the basis of our recent results. CMOS-compatible integration approaches of Ge channel devices are presented.