Interface Modification for Planar Perovskite Solar Cell Using Room-Temperature Deposited Nb2O5 as Electron Transportation Layer
Interface Modification for Planar Perovskite Solar Cell Using Room-Temperature Deposited Nb2O5 as Electron Transportation Layer
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使用室温沉积 Nb2O5 作为电子传输层的平面钙钛矿太阳能电池的界面改性
DOI:
10.1021/acsaem.8b00094
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发表时间:
2018-04
影响因子:
6.4
通讯作者:
Junhao Chu
中科院分区:
文献类型:
--
作者:
Yixin Guo;Jiahua Tao;Fuwen Shi;Xiaobo Hu;Zhigao Hu;Kezhi Zhang;Wenjuan Cheng;Shaohua Zuo;Jinchun Jiang;Junhao Chu
Compared with crystallized TiO2, amorphous Nb2O5has been applied in planar perovskite solar cell as electron transportation layer because of its excellent optical transmittance, low temperature preparation process, and similar Femi level with TiO2. However, the electron transfer rate is still limited by its low electron mobility and surface defect via room-temperature deposition process. Herein, a novel double buffer layer of [6,6]-phenyl-C61- butyric acid methyl ester(PCBM)/ionic liquid([EMIM]PF6) has been inserted between perovskite and Nb2O5film. The PCBM could passive the surface of Nb2O5and improve electron extraction ability. The insert of [EMIM]PF6could improve the hydrophilic of PCBM and decrease the dissolution of PCBM in DMF during spin-coat perovskite precursor solution. A relatively high open voltage (over 1.09 V) and conversion efficiency of 18.8% have been achieved by using a double buffer layer which is the highest PCE of Nb2O5based perovskite solar cell to our best knowledge. The results indicate room temperature deposited Nb2O5can be a suitable candidate for replacing crystallized TiO2film and proposed modification strategy could facilitate the future development of interface modified layer for high efficient planar perovskite solar cell.