Formation and electrical properties of heteroepitaxial SrTiO3/SrVO3−x/Si(100) structures
Formation and electrical properties of heteroepitaxial SrTiO3/SrVO3−x/Si(100) structures
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异质外延SrTiO3/SrVO3−x/Si(100)结构的形成和电学性质
DOI：
10.1063/1.114765
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发表时间：
1995
影响因子：
4
通讯作者：
H. Ishiwara
中科院分区：
文献类型：
--
作者：
B. Moon;H. Ishiwara
采用聚焦电子束蒸发方法实现了SrTiO 3（STO）/SrVO 3 −x（SVO）/Si（100）结构的异质外延生长。X射线衍射分析和极图测量发现，外延关系为（100）STO（100）SVO（100）Si和<011> STO <011> SVO <001> Si。二次离子质谱深度分析表明，薄膜和硅衬底之间的元素互扩散不明显。在STO/SVO/Si结构上沉积Al电极后，通过I-V（电流-电压）和C-V（电容-电压）测量来表征STO膜的电学性质。击穿场强、电阻率和介电常数的最佳值分别为345 kV/cm、6.4×1012 Ω cm和243。
Heteroepitaxial growth of dielectric SrTiO3(STO)/conductive SrVO3−x(SVO)/Si(100) structures was realized using a focused electron beam evaporation method. It was found from x‐ray diffraction analysis and pole figure measurement that the epitaxial relationships were (100)STO ∥(100)SVO∥(100)Si and 〈011〉STO∥〈011〉SVO∥〈001〉Si. It was also observed from depth profiling by secondary ion mass spectrometry that the interdiffusion of constituent elements among the films and Si substrate was not significant. Electrical properties of the STO film were characterized through I–V (current–voltage) and C–V (capacitance–voltage) measurements, after depositing Al electrodes on the STO/SVO/Si structure. The best values of breakdown field, resistivity, and dielectric constant were 345 kV/cm, 6.4×1012 Ω cm, and 243, respectively.