Strong Near‐Infrared Photoluminescence Emission of (003)‐Oriented MgTiO3 Thin Films
Strong Near‐Infrared Photoluminescence Emission of (003)‐Oriented MgTiO3 Thin Films
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(003) 取向 MgTiO3 薄膜的强近红外光致发光
DOI：
10.1111/jace.12439
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发表时间：
2013
影响因子：
3.9
通讯作者：
Chengxiong Huang
中科院分区：
文献类型：
--
作者：
Y. Ho;Chengxiong Huang
在本研究中，钛铁矿- mgtio3薄膜在p型Si（111）衬底上溅射，并讨论了薄膜的晶粒尺寸、结晶度和光致发光（PL）性能取向等外在影响。为了降低氧空位（作为浅缺陷）对薄膜发光的影响，引入氧（O2）作为溅射气体，并使用在浅缺陷态以下具有相应能量（hν = 2.33 eV）的激发光源（λ = 532 nm）。在本研究中，当MgTiO3薄膜呈现优选（003）取向并伴有六边形晶粒存在时，可以在室温下观察到以810.1 nm为中心的强近红外（NIR） PL发射。在本研究中，实验结果表明，MgTiO3薄膜的近红外发射强度高度依赖于晶体取向和/或晶粒形貌。
In this study, ilmenite-MgTiO3 films were sputtered on p-type Si(111) substrates and the extrinsic effects, such as grain size, crystallinity, and orientation of photoluminescence (PL) properties of the films are discussed. To reduce the effect of oxygen vacancies (act as shallow defects) on PL emissions in the films, oxygen (O2) was introduced as the sputtering gas and the excitation light source (λ = 532 nm) which has a corresponding energy (hν = 2.33 eV) below the shallow defect states was used. In this study, intense near-infrared (NIR) PL emission centered at 810.1 nm at room temperature can be observed when the MgTiO3 thin films exhibit the preferred (003)-orientation and accompanied by the presence of hexagon-shaped grains. In this study, the experiment results reveal that the NIR emission intensity of MgTiO3 films highly depend on crystal orientation and/or grain morphology.