A simple method for the thermal resistance measurement of AlGaAs/GaAs heterojunction bipolar transistors
A simple method for the thermal resistance measurement of AlGaAs/GaAs heterojunction bipolar transistors
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DOI：
10.1109/16.704388
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发表时间：
1998-08
影响因子：
3.1
通讯作者：
N. Bovolon;P. Baureis;J. Muller;P. Zwicknagl;R. Schultheis;E. Zanoni
中科院分区：
文献类型：
--
作者：
N. Bovolon;P. Baureis;J. Muller;P. Zwicknagl;R. Schultheis;E. Zanoni
提出了一种精确测量异质结双极晶体管（HBT）热阻的电学方法。该方法的主要优点是简单，因为它只需要在两个不同温度下测量器件的直流输出特性。本文介绍了该测量技术在多指异质结双极晶体管中的应用，并与其它测量方法进行了比较。
A novel electrical method to accurately measure the thermal resistance of heterojunction bipolar transistors (HBT's) is presented. The key advantage of the method is its simplicity, because it requires only the measurement of the device DC output characteristics at two different temperatures. In this brief, the measurement technique is illustrated, applied to multifinger HBT's and compared with other methods.