Mask process correction (MPC) modeling and its application to EUV mask for electron beam mask writer EBM-7000
Mask process correction (MPC) modeling and its application to EUV mask for electron beam mask writer EBM-7000
复制标题
掩模工艺校正 (MPC) 建模及其在电子束掩模写入器 EBM-7000 的 EUV 掩模中的应用
DOI：
10.1117/12.865822
复制
发表时间：
2010
影响因子：
1.4
通讯作者：
T. Takigawa
中科院分区：
文献类型：
--
作者：
T. Kamikubo;Takayuki Ohnishi;Shigehiro Hara;H. Anze;Y. Hattori;S. Tamamushi;S. Bai;Jen;R. Howell;George Chen;Jiangwei Li;Jun Tao;J. Wiley;T. Kurosawa;Y. Saito;T. Takigawa
在EUV掩模上的电子束写入中，已经报道CD线性度不显示如用常规COG（玻璃上铬）掩模观察到的简单特征，因为它们是由来自EUV掩模本身的散射电子引起的，EUV掩模本身包括堆叠的重金属和厚的多层。为了解决这个问题，掩模工艺校正（MPC）将是理想的适用。在MPC中，每个模式都被重塑。因此，拍摄次数不会增加，而书写时间亦会保持在合理范围内。在本文中，MPC扩展到模型的校正CD的线性误差的EUV掩模。并通过实际的写作测试，通过仿真和实验验证了该方法的有效性。
In electron beam writing on EUV mask, it has been reported that CD linearity does not show simple signatures as observed with conventional COG (Cr on Glass) masks because they are caused by scattered electrons form EUV mask itself which comprises stacked heavy metals and thick multi-layers. To resolve this issue, Mask Process Correction (MPC) will be ideally applicable. Every pattern is reshaped in MPC. Therefore, the number of shots would not increase and writing time will be kept within reasonable range. In this paper, MPC is extended to modeling for correction of CD linearity errors on EUV mask. And its effectiveness is verified with simulations and experiments through actual writing test.