Cu films containing insoluble Ru and RuNX on barrierless Si for excellent property improvements
Cu films containing insoluble Ru and RuNX on barrierless Si for excellent property improvements
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DOI：
10.1063/1.2790843
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发表时间：
2007-09
影响因子：
4
通讯作者：
J. Chu;C. Lin;V. John
中科院分区：
文献类型：
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作者：
J. Chu;C. Lin;V. John
本文报道了用共溅射方法在无势垒硅衬底上沉积的含Ru和RUNX的铜膜的优异性能。在680℃下保温1h后，∼3μΩcm的低电阻率和极小的漏电流，以及在铜/硅界面上没有检测到的反应，证实了这些铜(Ru)和铜(Runx)薄膜具有良好的热稳定性。此外，高稳定性的铜(RUNX)薄膜具有良好的附着力，是一种非常有前途的无势垒铜金属化候选材料。
This letter reports superior properties of Ru- and RuNX-bearing Cu films deposited by cosputtering on barrierless Si substrates. After annealing at temperatures up to 680°C for 1h, low resistivity of ∼3μΩcm and minimal leakage currents as well as no detectable reaction at the Cu∕Si interface have confirmed the excellent thermal stability of these Cu(Ru) and Cu(RuNX) films. Furthermore, the highly stable Cu(RuNX) film exhibits an outstanding adhesion property, proving to be a very promising candidate for the barrierless Cu metallization.