A Spin-on Dielectric Material for High Aspect Ratio Gap Fill

A Spin-on Dielectric Material for High Aspect Ratio Gap Fill
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用于高深宽比间隙填充的旋涂介电材料

DOI：
10.1557/proc-863-b8.5
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发表时间：
2005
期刊：
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影响因子：
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通讯作者：
E. Moyer
E. Moyer
中科院分区：
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文献类型：
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作者：
Wei Chen;Sheng;A. Ashraf;E. Somerville;Gerard Nowaczyk;B. Hwang;J. K. Lee;E. Moyer

文献摘要

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该通讯描述了一种潜在的旋涂玻璃 (SOG) 解决方案，用于浅沟槽隔离 (STI) 和预金属电介质 (PMD) 应用中的窄高深宽比沟槽填充。我们的开发工作主要集中在氢倍半硅氧烷 (HSQ, (HSiO 3/2 )n) 材料上，该材料具有无碳间隙填充解决方案的优势。无碳SOG材料的主要挑战是在热处理过程中实现纳米级间隙中的材料致密化，以及在湿法清洁步骤中实现间隙填充材料的致密化。本文报告了纳米级间隙中材料致密化的一些方法和发现以及随后的湿法蚀刻测试的结果。
This communication describes the results of a potential spin-on glass (SOG) solution for narrow and high aspect ratio trench fill in both shallow trench isolation (STI) and premetal dielectric (PMD) applications. We have focused our development work on a hydrogen silsesquioxane (HSQ, (HSiO 3/2 )n) material, which offers the advantage of a carbon free gap fill solution. The main challenge for carbon-free SOG materials is to achieve material densification in the nano-scale gaps during thermal processing that of the gap filled material during the wet cleaning steps. This paper reports some approaches and findings on material densification in the nano-scale gaps and the results of subsequent wet etch tests.