Effect of Interfacial Structure on Organic Field Effect Transistor.
Effect of Interfacial Structure on Organic Field Effect Transistor.
复制标题
界面结构对有机场效应晶体管的影响。
DOI：
10.1380/jsssj.24.69
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
T. Kawai
中科院分区：
文献类型：
--
作者：
T. Kamata;M. Yoshida;T. Kodzasa;M. Matsuzawa;T. Kawai
关于有机电场效应晶体管，我们研究了有机半导体及其绝缘层或电极界面上的电子和结构相互作用。结果表明，有机半导体层的晶体结构取决于其制备条件和衬底的表面能，特别是界面的近场区域。研究还表明，控制绝缘层的表面平整度、有机半导体层与绝缘层或电极之间的接触条件是获得良好FET特性的关键。
We have examined electronic and structural interactions at the interfaces of organic semiconductors and their insulation layers or electrodes with regard to organic electric field effect transistors. It was revealed that the crystal structure of an organic semiconductor layer depends on its preparation conditions and the surface energy of the substrate, especially near field region of the interface. Also it was revealed that the control of the surface smoothness of the insulator layer, contact condition between the organic semiconductor layer and the insulator layer or electrode are essential to obtain an excellent FET characteristic.