On-Chip Characterization of Single-Event Transient Pulsewidths
On-Chip Characterization of Single-Event Transient Pulsewidths
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DOI：
10.1109/tdmr.2006.885589
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发表时间：
2006-12
影响因子：
2
通讯作者：
B. Narasimham;Vishwa Ramachandran;B. Bhuva;peixiong zhao;A. Witulski;W. T. Holman;L. Massengill;J. D. Black;William H. Robinson;Dale McMorrow
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文献类型：
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作者：
B. Narasimham;Vishwa Ramachandran;B. Bhuva;peixiong zhao;A. Witulski;W. T. Holman;L. Massengill;J. D. Black;William H. Robinson;Dale McMorrow
开发了一种新的片上单事件瞬态（SET）测试结构，可以自动表征随机SET脉冲的宽度。仿真结果表明，1.5 μ m技术的测量粒度为900 ps，并且随着技术的发展，测量粒度迅速减小。激光测试用于演示使用1.5 μ m工艺制造的测试芯片的电路操作。实验结果表明，随着激光能量的增加，脉冲宽度从900 ps左右变化到3ns以上
A new on-chip single-event transient (SET) test structure has been developed to autonomously characterize the widths of random SET pulses. Simulation results show measurement granularity of 900 ps for a 1.5 mum technology and also indicate that the measurement granularity rapidly scales down with technology. Laser tests were used to demonstrate circuit operation on test chips fabricated using a 1.5 mum process. The experimental results indicate pulsewidths varying from about 900 ps to over 3 ns as the laser energy was increased