Optical Properties of Zinc-Blende InGaN/GaN Quantum Well Structures and Comparison with Experiment
Optical Properties of Zinc-Blende InGaN/GaN Quantum Well Structures and Comparison with Experiment
复制标题
闪锌矿InGaN/GaN量子阱结构的光学特性及与实验的比较
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
Lee Yong
中科院分区：
文献类型：
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作者：
Park Seoung;Lee Yong
利用多带有效质量理论研究了锌掺杂InGaN/GaN量子阱结构的光学性质。在300 K的过渡波长值范围为440至570 nm的In组分和阱宽的调查范围内。理论波长与实验结果吻合较好。光增益随阱宽的增加而减小。这主要是由于准费米能级分离的减少，因为光学矩阵元随阱宽增加。
Optical properties of zinc-blende InGaN/GaN QW structures are investigated using the multiband effective-mass theory. The transition wavelength values at 300 K ranged from 440 to 570 nm in the investigated range of the In composition and the well width. The theoretical wavelengths show reasonable agreement with the experimental results. The optical gain decreases with the increasing well width. This is mainly due to the reduction in the quasi-Fermi-level separation because the optical matrix element increases with the well width.