Crystallinity and Thermoelectric Properties of Si/GeB Multilayers Prepared with Si Buffer Layer and SiO2 Substrates
Crystallinity and Thermoelectric Properties of Si/GeB Multilayers Prepared with Si Buffer Layer and SiO2 Substrates
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Si缓冲层和SiO2衬底制备的Si/GeB多层膜的结晶度和热电性能
DOI：
10.1143/jjap.48.061201
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发表时间：
2009
影响因子：
1.5
通讯作者：
M. Kumeda
中科院分区：
文献类型：
--
作者：
A. Matoba;K. Sasaki;M. Kumeda
采用离子束溅射法制备了Si/GeB多层膜，研究了结晶度对热电性能的影响。使用Si缓冲层和SiO2层控制样品的结晶度。在Si缓冲层上制备的样品显示出与在没有缓冲层的Si晶片上制备的样品相似的性质。此外，发现由于表面清洁效应，在Si缓冲层上制备的样品的电阻率低于在没有缓冲层的Si晶片上制备的样品的电阻率。另一方面，在SiO2上制备的样品表现出较差的热电性能。这些结果是由结晶度和周期性的变化引起的，这与载流子限制效应有关。热退火后，发现多层结构迅速退化，热电功率的符号发生变化。这被认为是由于多层结构的塌陷而导致的界面中的晶体缺陷所引起的。
Si/GeB multilayers were prepared by ion-beam sputtering technique and the effect of the crystallinity on thermoelectric properties was investigated. The crystallinity of the samples was controlled using Si buffer and SiO2 layers. Samples prepared on the Si buffer layer show similar properties to samples prepared on a Si wafer without the buffer layer. Moreover, it is found that the resistivity of the samples prepared on the Si buffer layer is lower than that of the samples prepared on the Si wafer without the buffer layer because of the surface cleaning effect. On the other hand, samples prepared on SiO2 show poor thermoelectric properties. These results are caused by the change in the crystallinity and periodicity, which are related to the carrier confinement effect. After thermal annealing, it is found that the multilayer structure is degraded rapidly and that the sign of the thermoelectric power is changed. This is considered to be caused by crystalline defects in the interfaces due to the collapse of the multilayer structure.
热退火重 B 掺杂 SiGe 薄膜上的异常大热电势
DOI：
--
发表时间：
2003
期刊：
Jpn.J.Appl.Phys. 41(8B)
影响因子：
--
作者：
T.Kawahara;S.M.Lee;Y.Okamoto;J.Morimoto;K.Sasaki;T.Hata
通讯作者：
T.Hata