Analysis of trap state densities at HfO2/In0.53Ga0.47As interfaces
Analysis of trap state densities at HfO2/In0.53Ga0.47As interfaces
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HfO2/In0.53Ga0.47As 界面处的陷阱态密度分析
DOI：
10.1063/1.3360221
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发表时间：
2010
影响因子：
4
通讯作者：
S. Stemmer
中科院分区：
文献类型：
--
作者：
Y. Hwang;R. Engel;N. Rudawski;S. Stemmer
通过化学束沉积将 HfO2 沉积在 n 型和 p 型 In0.53Ga0.47As 上。在较宽的温度范围（77 至 300 K）内使用电导法对界面陷阱密度 (Dit) 及其能级分布进行量化。接近本征能级的陷阱能级导致 Dit 升至 1013 cm−2 eV−1 以上。室温下，中间能隙处的陷阱能级会导致 n 型沟道的电容电压曲线出现错误的反转行为。讨论了靠近带边缘的 Dit 的明显减小。
HfO2 was deposited on n- and p-type In0.53Ga0.47As by chemical beam deposition. Interface trap densities (Dit) and their energy level distribution were quantified using the conductance method in a wide temperature range (77 to 300 K). A trap level close to the intrinsic energy level caused the Dit to rise above 1013 cm−2 eV−1. The trap level at midgap gives rise to false inversion behavior in the capacitance-voltage curves for n-type channels at room temperature. The apparent decrease of the Dit close to the band edges is discussed.