Memristive Behavior in One-Dimensional Hexagonal Boron Nitride/Carbon Nanotube Heterostructure Assemblies
Memristive Behavior in One-Dimensional Hexagonal Boron Nitride/Carbon Nanotube Heterostructure Assemblies
复制标题
DOI：
10.1021/acsaelm.1c00472
复制
发表时间：
2021-08
影响因子：
4.7
通讯作者：
Hiroo Suzuki;Misaki Kishibuchi;Kazuma Shimogami;Mitsuaki Maetani;Kyohei Nasu;T. Nakagawa;Yuichirou Ta
中科院分区：
文献类型：
--
作者：
Hiroo Suzuki;Misaki Kishibuchi;Kazuma Shimogami;Mitsuaki Maetani;Kyohei Nasu;T. Nakagawa;Yuichirou Ta
范德华（VdW）异质结构因其作为独特物理和电子设备应用平台的潜力而引起了广泛关注。最近，通过在碳纳米管（CNT）上直接生长二维材料（例如六方氮化硼（hBN）和过渡金属二硫属化物）实现了一维VdW（1D-VdW）异质结构。尽管其在 VdW 异质结可能的高集成密度方面具有吸引力的配置，但在实际应用中从单个纳米结构扩展到块体结构仍然尚未实现。制造大体积 1D-VdW 异质结构的一种可能策略是在 CNT 组件上直接生长异质材料。在过去的十年中，干纺丝方法取得了重大进展，将碳纳米管扩大到块体结构，同时保持碳纳米管表面清洁，没有任何混合物。通过将干纺丝技术与六方氮化硼直接异质生长相结合，我们成功实现了六方氮化硼/碳纳米管异质结构的体尺度集成，并且六方氮化硼层的结晶度高度可控。通过电传输研究，我们发现了六方氮化硼/碳纳米管异质结构组件中的忆阻行为。通过系统实验和结构观察，我们提出了一种可能的忆阻行为机制模型，该机制源于碳纳米管和功能化无定形碳（a-C）上六方氮化硼层的一维生长。通过良好控制的生长制备的具有乱层层和晶界的六方氮化硼的不完美结晶度可以作为形成导电丝通道的适当势垒，从而增强忆阻行为。具有忆阻功能和高机械自由度的六方氮化硼/碳纳米管异质结构组件对于未来的神经形态计算和传统的非易失性存储设备非常有价值。
The van der Waals (VdW) heterostructure has attracted significant attention owing to its potential as a platform for unique physics and electronic device applications. Recently, a one-dimensional VdW (1D-VdW) heterostructure was achieved by the direct growth of two-dimensional materials, such as hexagonal boron nitride (hBN) and transition-metal dichalcogenide on carbon nanotubes (CNTs). Despite its attractive configuration in terms of the possible high integration density of VdW heterojunctions, scaling up from individual nanostructures to bulk structures for actual applications remains unachieved. One possible strategy to fabricate the bulk-scale 1D-VdW heterostructure is the direct growth of heterogeneous materials on CNT assemblies. In the past decade, significant developments have been made in the dry spinning method to scale up CNTs to bulk structures while maintaining the clean surface of CNTs without any mixture. By combining the dry spinning technique and direct heterogeneous growth of hBN, we successfully achieved the bulk-scale integration of the hBN/CNT heterostructures with high controllability of crystallinity of the hBN layer. Through electric transport investigations, we found memristive behavior in hBN/CNT heterostructure assemblies. Through systematic experiments and structural observations, we propose a possible model for the mechanism of memristive behavior that originates from the one-dimensional growth of the hBN layer on the CNTs and functionalized amorphous carbon (a-C). The imperfect crystallinity of hBN with turbostratic layers and grain boundaries prepared by well-controlled growth may function as an appropriate barrier for the formation of a conductive filament channel, enhancing the memristive behavior. The hBN/CNT heterostructure assemblies with memristive functions and high mechanical degrees of freedom are extremely valuable for future neuromorphic computing and conventional nonvolatile memory devices.