Synthesis of Cu2FeSnSe4 thin film by selenization of RF magnetron sputtered precursor
Synthesis of Cu2FeSnSe4 thin film by selenization of RF magnetron sputtered precursor
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DOI：
10.1016/j.matlet.2013.11.107
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发表时间：
2014-02
影响因子：
3
通讯作者：
Xiankuan Meng;H. Deng;Jun He;Li-ping Zhu;Lin Sun;P. Yang;J. Chu
中科院分区：
文献类型：
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作者：
Xiankuan Meng;H. Deng;Jun He;Li-ping Zhu;Lin Sun;P. Yang;J. Chu
摘要采用射频磁控溅射和后退火两阶段工艺在玻璃衬底上合成了CFTSe （Cu 2 FeSnSe 4）薄膜。化学成分接近于能量色散x射线光谱测定的2:1:1:4的化学计量。x射线衍射图表明，所有相均属于CFTSe。它表明没有额外的或中间的阶段。在拉曼散射光谱中观察到薄膜的1模式。通过XRD和拉曼光谱分析，可以确定CFTSe的结构。薄膜呈锡酸盐结构（空间群1 4¯2 m），晶格参数a= 5.6889 Å， c= 11.284 Å。进一步透射光谱表明，薄膜带隙为1.10 eV。
Abstract Cu 2 FeSnSe 4 (CFTSe) thin film was synthesized on glass substrate by two-stage process, which is RF magnetron sputtering and following post-annealing process. The chemical composition is close to the stoichiometry of 2: 1: 1: 4 measured by energy dispersive X-ray spectroscopy. X-ray diffraction pattern indicates that all phases belong to CFTSe. It indicates that there are no additional or intermediate phases. A 1 mode of the film is observed in Raman scattering spectra. From the results of XRD and Raman spectrum analysis, the structure of CFTSe can be determined. The film exhibits stannite structure (space group 1 4¯ 2 m) with lattice parameters a= 5.6889 Å and c= 11.284 Å. Further transmission spectra demonstrates that the band gap of thin film is 1.10 eV.