Large Time Behavior of the Solutions to a Hydrodynamic Model for Semiconductors

Large Time Behavior of the Solutions to a Hydrodynamic Model for Semiconductors
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DOI:
10.1137/s0036139996312168
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发表时间:
1998-12
期刊:
SIAM J. Appl. Math.
影响因子:
--
通讯作者:
R. Natalini;T. Luo;Z. Xin
R. Natalini;T. Luo;Z. Xin
中科院分区:
其他
文献类型:
--
作者:
R. Natalini;T. Luo;Z. Xin

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我们建立了小初值下一维半导体等熵Euler-Poisson(或流体动力学)模型Cauchy问题整体光滑解的存在性。特别是,我们表明,作为$t\\infty$,这些解决方案收敛到固定的漂移扩散方程的解决方案。在不作小性假设的情况下,证明了漂移扩散方程平稳解的存在唯一性。
We establish the global existence of smooth solutions to the Cauchy problem for the one-dimensional isentropic Euler--Poisson (or hydrodynamic) model for semiconductors for small initial data. In particular we show that, as $t\to\infty$, these solutions converge to the stationary solutions of the drift-diffusion equations. The existence and uniqueness of stationary solutions to the drift-diffusion equations are proved without the smallness assumption.