GaAs nanopillar arrays with suppressed broadband reflectance and high optical quality for photovoltaic applications
GaAs nanopillar arrays with suppressed broadband reflectance and high optical quality for photovoltaic applications
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DOI：
10.1364/ome.2.001671
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发表时间：
2012-11-01
影响因子：
2.8
通讯作者：
Anand, S.
中科院分区：
文献类型：
--
作者：
Sanatinia, R.;Awan, K. M.;Anand, S.
我们报告的GaAs纳米柱（NP）阵列的制造和光学特性，通过自组装二氧化硅颗粒（纳米球光刻）和干法蚀刻的组合使用低成本的掩模生成。锥形结构（圆锥形和截头体NP阵列）通过适当的工艺参数优化制造。在宽的波长范围内观察到两种几何形状的表面反射率的显着抑制。基于时域有限差分（FDTD）方法的模拟结果与反射率测量结果吻合良好，可作为设计纳米粒子和了解其与光相互作用的指导方针。湿法化学腐蚀和硫基钝化的GaAs纳米颗粒的组合，结果在PL强度和PL线宽的恢复超过一个数量级的增强，这是非常有前途的光伏应用。(C)2012美国光学学会
We report on fabrication and optical characterization of GaAs nanopillar (NP) arrays, obtained using a combination of low-cost mask generation by self-assembled silica particles (nanosphere lithography) and dry etching. Tapered structures (conical and frustum NP arrays) are fabricated by appropriate optimization of process parameters. Significant suppression of surface reflectance is observed for both geometries over a broad wavelength range. Simulations, based on finite difference time domain (FDTD) method, show good agreement with reflectivity measurements and serve as a guideline for design of NPs and understanding their interaction with light. A combination of wet chemical etching and sulfur-based passivation of GaAs NPs, results in more than one order of magnitude enhancement in PL intensity and recovery of PL line-width, which is very promising for photovoltaic applications. (C) 2012 Optical Society of America