Defect-mediated resonance shift of silicon-on-insulator racetrack resonators.
Defect-mediated resonance shift of silicon-on-insulator racetrack resonators.
复制标题
绝缘体上硅赛道谐振器的缺陷介导的谐振位移。
DOI：
10.1364/oe.19.011969
复制
发表时间：
2011
期刊：
影响因子：
3.8
通讯作者：
A. Knights
中科院分区：
文献类型：
--
作者：
J. Ackert;J. Doylend;D. Logan;P. Jessop;R. Vafaei;L. Chrostowski;A. Knights
研究了惰性离子注入对SOI跑道谐振器的影响。选择性离子注入用于在谐振器的一部分内产生深能级缺陷。在100 - 300 °C的连续注入后退火温度范围内推导出谐振波长和往返损耗。随着器件退火，共振波长随之发生变化，与植入后折射率增加和恢复到植入前值一致。实现了约2.9nm的共振波长的总位移，相当于折射率增加0.02。注入后的过量损耗增加到301 dB/cm，并在热退火后降低到35 dB/cm。除了提供有价值的数据，为那些将缺陷内的谐振结构，我们建议，这些结果提出了一个永久调谐（或修剪）的环形谐振器特性的方法。
We present a study on the effects of inert ion implantation of Silicon-On-Insulator (SOI) racetrack resonators. Selective ion implantation was used to create deep-level defects within a portion of the resonator. The resonant wavelength and round-trip loss were deduced for a range of sequential post-implantation annealing temperatures from 100 to 300 °C. As the devices were annealed there was a concomitant change in the resonance wavelength, consistent with an increase in refractive index following implantation and recovery toward the pre-implanted value. A total shift in resonance wavelength of ~2.9 nm was achieved, equivalent to a 0.02 increase in refractive index. The excess loss upon implantation increased to 301 dB/cm and was reduced to 35 dB/cm following thermal annealing. In addition to providing valuable data for those incorporating defects within resonant structures, we suggest that these results present a method for permanent tuning (or trimming) of ring resonator characteristics.