Current mirror featuring DTMOS for analog single‐event transient mitigation in space application
Current mirror featuring DTMOS for analog single‐event transient mitigation in space application
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DOI：
10.1088/1361-6641/ab9a17
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发表时间：
2020-07
影响因子：
1.9
通讯作者：
Jingtian Liu;Xinyu Xu;Qian Sun;Bin Liang;Jianjun Chen;Yaqing Chi;Yang Guo
中科院分区：
文献类型：
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作者：
Jingtian Liu;Xinyu Xu;Qian Sun;Bin Liang;Jianjun Chen;Yaqing Chi;Yang Guo
体结和栅结在一起的动态阈值电压MOSFET(DTMOS)通常用于超低压应用。由于器件的阈值电压是其栅电压的函数，并且电流驱动能力随着栅源电压的增加而增强，因此它具有在抗辐射IC电路中应用的潜力。本文首先论证了DTMOS特别适合于抑制共源共栅电流镜中的模拟单粒子瞬变(ASET)，而代价可以忽略不计。建立了基本电流镜和共源共栅电流镜的模型，分析了DTMOS结构的器件，并与标准MOSFET的辐射性能进行了比较。仿真结果表明，DTMOS方案减少了电荷收集，有效地抑制了共源共栅电流镜中的单粒子效应引起的扰动，同时由于众所周知的双极效应，在基本电流镜中起到了不利的作用。该技术为星载IC的设计者提供了一种抑制ASET干扰的新方法。
Dynamic threshold-voltage MOSFETs (DTMOSs) with bulk and gate tied together are commonly used in ultra-low voltage applications. Since the threshold voltage of the device is a function of its gate voltage, and the current-driving capability is boosted as the gate-source voltage increases, it has the potential to be applied in the community of radiation-hardened IC circuits. This paper firstly demonstrates that DTMOS is particularly suitable for analog single-event transient (ASET) mitigation in cascode current mirrors with negligible penalty. A basic current mirror and a cascode current mirror are modelled to analyze the devices in DTMOS configuration, and compare radiation performance with standard MOSFETs. Simulation results demonstrate that the DTMOS scheme reduces charge collection, and suppresses single-event effect-induced perturbation effectively in the cascode current mirror, while playing a detrimental role in basic current mirrors due to the well-known bipolar effect. This technique provides a novel method for mitigating ASET disturbances for the designers of spaceborne ICs.