Pressure dependence of the resistivity of single-wall carbon nanotube ropes
Pressure dependence of the resistivity of single-wall carbon nanotube ropes
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DOI：
10.1103/physrevb.61.7320
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发表时间：
2000-03
影响因子：
3.7
通讯作者：
R. Gaal;J. Salvetat;L. Forró
中科院分区：
文献类型：
--
作者：
R. Gaal;J. Salvetat;L. Forró
我们在4 - 300 K的温度范围内，在高达2 GPa的静水压下，对纯化的单壁碳纳米管厚膜进行了直流输运测量。在室温下，我们发现电阻随压力的非单调变化。电阻首先随着压力的增加而下降，但是在Venkateswaran等人的拉曼实验[Phys. Rev. B 59，10 928（1999）]证明的管的六边形变形的范围内，我们看到样品电阻率的快速增加伴随着非常长的时间尺度弛豫。电阻率的温度依赖性不会随压力变化太大，并且我们发现$\mathrm{exp}[{（T}_{0}{/T）}^{1/4}]$温度依赖性表明跳跃式导电。
We have performed dc transport measurements on purified thick films of single-walled carbon nanotubes under hydrostatic pressures up to 2 GPa in the temperature range 4\char21{}300 K. At room temperature we have found nonmonotonic variation of the resistance with applied pressure. The resistance first drops with increasing pressure, but in the range where hexagonal deformation of the tubes is evidenced by the Raman experiments of Venkateswaran et al. [Phys. Rev. B 59, 10 928 (1999)], we see a fast increase in sample resistivity acompanied by very long time-scale relaxations. The temperature dependence of the resistivity does not change much with pressure, and we find an $\mathrm{exp}[{(T}_{0}{/T)}^{1/4}]$ temperature dependence indicating hoppinglike conduction.