Carbon-nanotube-based nanoelectromechanical switch
Carbon-nanotube-based nanoelectromechanical switch
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DOI：
10.1117/12.638440
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发表时间：
2005-03
期刊：
影响因子：
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通讯作者：
J. Kang;K. Byun;K. Song;H. Hwang
中科院分区：
文献类型：
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作者：
J. Kang;K. Byun;K. Song;H. Hwang
研究了一种基于原子模拟的含电荷转移的纳米机电模型。经典分子动力学方法结合连续电模型可以应用于碳纳米管纳米机电存储器件，该器件可以通过原子电容力和原子间作用力表征碳纳米管的弯曲性能。碳原子的电容量随碳原子高度的变化而变化。我们对长度为11.567 nm （LCNT）、沟槽深度为0.9 ~ 1.5 nm (H)的悬浮式（5,5）碳纳米管桥进行了MD模拟。碳纳米管在金表面碰撞后，碳纳米管桥在金表面振荡，振幅为~1 Å，振幅逐渐减小。当H≤1.3 nm时，碳纳米管桥在第一次碰撞后继续与金表面接触。当H≥1.4 nm时，碳纳米管桥经过多次回弹与金表面稳定接触。随着H的增大，阈值电压线性增大。随着外加偏压的增加，各沟深的过渡时间呈指数递减。当H / LCNT低于0.13时，碳纳米管纳米机电存储器为永久性非易失性存储器，而当H / LCNT高于0.14时，碳纳米管纳米机电存储器为易失性存储器或开关器件。模拟得到的导通电压和隧道电阻与以往的实验和理论结果一致。
A nanoelectromechanical model based on atomistic simulations including charge transfer was investigated. Classical molecular dynamics method combined with continuum electric models could be applied to a carbon-nanotube nanoelectromechanical memory device that could be characterized by carbon-nanotube bending performance by atomistic capacitive and interatomic forces. The capacitance of the carbon atom was changed with the height of the carbon atom. We performed MD simulations for a suspended (5,5) carbon-nanotube-bridge with the length of 11.567 nm (LCNT) and the depth of the trench of 0.9 ~ 1.5 nm (H). After the carbon-nanotube collided on the gold surface, the carbon-nanotube-bridge oscillated on the gold surface with amplitude of ~1 Å, and the amplitude gradually decreased. When H ≤ 1.3 nm, the carbon-nanotube-bridge continually contacted with the gold surface after the first collision. When H ≥ 1.4 nm, the carbon-nanotube-bridge stably contacted with the gold surface after several rebounds. As H increased, the threshold voltage linearly increased. As the applied bias increased, the transition time exponentially decreased at each trench depth. When H / LCNT was below 0.13, the carbon-nanotube nanoelectromechanical memories were permanent nonvolatile memory devices, whereas the carbon-nanotube nanoelectromechanical memories were volatile memory or switching devices when H / LCNT was above 0.14. The turn-on voltages and tunneling resistances obtained from our simulations are compatible to those obtained from previous experimental and theoretical results.